We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 /spl mu/m operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.
|Title of host publication||Proceedings of the International Conference on Indium Phosphide and Related Materials, 2003|
|Number of pages||3|
|Publication status||Published - 2003|
- gallium arsenide
- indium compounds
- optical pumping
- surface emitting lasers