We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.
|Title of host publication||2004 IEEE LEOS Annual Meeting Conference Proceedings|
|Number of pages||1|
|Publication status||Published - 2004|