Abstract
High-efficiency power converters have benefits of minimizing energy consumption, reducing costs, and realizing high power densities. The silicon super-junction MOSFET is an attractive device for high-efficiency applications. However, its highly non-linear output capacitance and the reverse recovery properties of its intrinsic diode must be addressed when used in voltage source converters. A dual-mode switching technique operating in conjunction with intrinsic diode deactivation circuitry is proposed in this paper. The technique is demonstrated in an 800-W inverter-leg configuration operating from a 400-V DC voltage rail and switching at 20 kHz. Intended applications include machine drives. The full-load efficiency reaches approximately 98.7% and no forced cooling is needed.
Original language | English |
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Pages | 2467-2474 |
Number of pages | 8 |
DOIs | |
Publication status | Published - 27 May 2019 |
Event | 2019 IEEE Applied Power Electronics Conference and Exposition - Anaheim Convention Center 800 W Katella Ave, Anaheim, CA 92802, Anaheim, United States Duration: 17 Mar 2019 → 21 Mar 2019 http://www.apec-conf.org/ |
Conference
Conference | 2019 IEEE Applied Power Electronics Conference and Exposition |
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Country/Territory | United States |
City | Anaheim |
Period | 17/03/19 → 21/03/19 |
Internet address |
Keywords
- control
- gate driver
- inverter
- MOSFET
- super-junction
- power converters