Amplification and laser action in diode-pumped 1.3um GaInNAs vertical-cavity structures

S. Calvez, A.H. Clark, J.M. Hopkins, P. Merlin, H.D. Sun, M.D. Dawson, T. Jouhti, M. Pessa

Research output: Contribution to conferencePaperpeer-review


We report fibre-coupled CW diode pumping of 1.3 /spl mu/m GaInNAs/GaAs vertical-cavity semiconductor optical amplifiers (VCSOAs) and surface emitting lasers (VCSELs). The GaInNAs/GaAs structures are monolithic and are specifically designed for optical pumping, offering advantages in design simplification and added functionality. They allow us to demonstrate up to 1.09 dB of amplification and up to 213 /spl mu/W of 1297.2 nm laser emission. Both the 980 nm pump light and 1.3 /spl mu/m signal are coupled to/from the devices by fibers, giving promising systems-compatible demonstrators of GaInNAs-based amplifier technology.
Original languageEnglish
Number of pages2
Publication statusPublished - Nov 2002
Event15th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society - Glasgow, UK
Duration: 10 Nov 200214 Nov 2002


Conference15th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society
CityGlasgow, UK


  • 1.3 micron
  • 1297.2 nm
  • 213 muW
  • GaInNAs wells
  • GaInNAs-GaAs
  • GaInNAs-based amplifier technology
  • GaInNAs/GaAs VCSELs
  • GaInNAs/GaAs VCSOAs
  • amplification
  • design
  • simplification
  • fibre-coupled CW diode pumping
  • laser action
  • monolithic structures
  • optical pumping
  • surface emitting lasers
  • vertical-cavity semiconductor optical amplifiers

Cite this