C-band emission from GaInNAsSbVCSEL on GaAS

N. Laurand; S. Calvez; H.D. Sun; M.D. Dawson; J.A. Gupta; G.C. Aers

doi:10.1049/el:2006398

C-band emission from GaInNAsSbVCSEL on GaAS

N. Laurand, S. Calvez, H.D. Sun, M.D. Dawson, J.A. Gupta, G.C. Aers

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The 1.55 /spl mu/m pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO/sub 2//TiO/sub 2/) top mirror, while the bottom mirror and active region were grown on GaAs by MBE. Temperature-dependent (10-40/spl deg/C) laser measurements were made for an as-grown sample and an annealed sample, both having a room-temperature lasing wavelength of 1547 nm. Results indicate an annealing-induced blue-shift of the gain peak.

Original language	English
Pages (from-to)	29-30
Number of pages	1
Journal	Electronics Letters
Volume	42
Issue number	1
DOIs	https://doi.org/10.1049/el:2006398
Publication status	Published - 2006

Keywords

optics
photonics
lasers

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10.1049/el:2006398

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title = "C-band emission from GaInNAsSbVCSEL on GaAS",

abstract = "The 1.55 /spl mu/m pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO/sub 2//TiO/sub 2/) top mirror, while the bottom mirror and active region were grown on GaAs by MBE. Temperature-dependent (10-40/spl deg/C) laser measurements were made for an as-grown sample and an annealed sample, both having a room-temperature lasing wavelength of 1547 nm. Results indicate an annealing-induced blue-shift of the gain peak.",

keywords = "optics, photonics, lasers",

author = "N. Laurand and S. Calvez and H.D. Sun and M.D. Dawson and J.A. Gupta and G.C. Aers",

year = "2006",

doi = "10.1049/el:2006398",

language = "English",

volume = "42",

pages = "29--30",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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TY - JOUR

T1 - C-band emission from GaInNAsSbVCSEL on GaAS

AU - Laurand, N.

AU - Calvez, S.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Gupta, J.A.

AU - Aers, G.C.

PY - 2006

Y1 - 2006

N2 - The 1.55 /spl mu/m pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO/sub 2//TiO/sub 2/) top mirror, while the bottom mirror and active region were grown on GaAs by MBE. Temperature-dependent (10-40/spl deg/C) laser measurements were made for an as-grown sample and an annealed sample, both having a room-temperature lasing wavelength of 1547 nm. Results indicate an annealing-induced blue-shift of the gain peak.

AB - The 1.55 /spl mu/m pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO/sub 2//TiO/sub 2/) top mirror, while the bottom mirror and active region were grown on GaAs by MBE. Temperature-dependent (10-40/spl deg/C) laser measurements were made for an as-grown sample and an annealed sample, both having a room-temperature lasing wavelength of 1547 nm. Results indicate an annealing-induced blue-shift of the gain peak.

KW - optics

KW - photonics

KW - lasers

UR - http://dx.doi.org/10.1049/el:2006398

U2 - 10.1049/el:2006398

DO - 10.1049/el:2006398

M3 - Article

VL - 42

SP - 29

EP - 30

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 1

ER -

C-band emission from GaInNAsSbVCSEL on GaAS

Abstract

Keywords

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