C-band emission from GaInNAsSbVCSEL on GaAS

N. Laurand, S. Calvez, H.D. Sun, M.D. Dawson, J.A. Gupta, G.C. Aers

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The 1.55 /spl mu/m pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO/sub 2//TiO/sub 2/) top mirror, while the bottom mirror and active region were grown on GaAs by MBE. Temperature-dependent (10-40/spl deg/C) laser measurements were made for an as-grown sample and an annealed sample, both having a room-temperature lasing wavelength of 1547 nm. Results indicate an annealing-induced blue-shift of the gain peak.
Original languageEnglish
Pages (from-to)29-30
Number of pages1
JournalElectronics Letters
Issue number1
Publication statusPublished - 2006


  • optics
  • photonics
  • lasers

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