Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS

K.S. Kim, T. Kim, Y.J. Park, S.I. Baek, Y.W. Kim, H.D. Sun, M.D. Dawson

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Structural and optical properties of MOVPE-grown GaInNAs quantum wells (QW) with multiple barriers (InGaAs/GaNAs) have been investigated. Significant improvement of optical performance in the 1.3 μm range is demonstrated with the proposed structure. PLE studies show that the density of N-related localized states can be reduced by the introduction of a thin InGaAs layer due to the improved interface quality. Based on the structural analysis, it is concluded that the InGaAs layer supports the nitrogen redistribution within the QW, resulting in a sharp interface. The blue-shift trend of the GaInNAs QW as a function of the GaNAs thickness can be explained by the reduction of the N content in the GaInNAs QW.
Original languageEnglish
Pages (from-to)620-624
Number of pages4
JournalJournal of Crystal Growth
Issue number2
Publication statusPublished - 2006


  • photoluminescence
  • crystals
  • photonics

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