Composition and optical properties of dilute-Sb GaN1−xSbx highly mismatched alloys grown by MBE

Martin Shaw, K.M. Yu, M. Ting, R. E. L. Powell, W. L. Sarney, S. P. Svensson, A. J. Kent, W. Walukiewicz, C. T. Foxon, S. V. Novikov, Robert W. Martin

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In this work the compositional and optical characterization of three series of dilute-Sb GaN1 − xSbx alloys grown with various Sb flux, under N and Ga-rich conditions, are presented. Using wavelength dispersive x-ray microanalysis and Rutherford backscattering spectroscopy it is found that the N-rich samples (Ga flux < 2.3 × 10−7 Torr) incorporate a higher magnitude of GaSb than the Ga-rich samples (Ga flux > 2.3 × 10−7 Torr) under the same growth conditions. The optical properties of the Ga-rich samples are measured using room temperature cathodoluminescence (CL), photoluminescence (PL) and absorption measurements. A broad luminescence peak is observed around 2.2 eV. The nature and properties of this peak are considered, as is the suitability of these dilute-Sb alloys for use in solar energy conversion devices.
Original languageEnglish
Article number465102
Number of pages7
JournalJournal of Physics D: Applied Physics
Issue number46
Publication statusPublished - 29 Oct 2014


  • dilute-Sb GaN1 − xSbx alloys
  • solar energy conversion devices
  • Highly Mismatched Alloys (HMAs)
  • semiconductor alloys

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