Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

Daniele Carmine Parrotta; Walter Lubeigt; Alan Kemp; David Burns; Martin Dawson; Jennifer Hastie

doi:10.1364/OL.36.001083

Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

Daniele Carmine Parrotta, Walter Lubeigt, Alan Kemp, David Burns, Martin Dawson, Jennifer Hastie

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

79 Downloads (Pure)

Abstract

A KGd(WO4)(2) Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5: 6W of absorbed diode pump power, and output power up to 0.8W at 1143nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157nm.

Original language	English
Pages (from-to)	1083-1085
Number of pages	3
Journal	Optics Letters
Volume	36
Issue number	7
Early online date	18 Mar 2011
DOIs	https://doi.org/10.1364/OL.36.001083
Publication status	Published - 1 Apr 2011

Keywords

all-solid-state
intractivity
crystal
heatspreader
generation
power
continuous-wave raman
laser pumped
semiconductor disk laser

Access to Document

10.1364/OL.36.001083

Parrotta 2011Final published version, 297 KB

2 Finished

Diamond Raman Lasers
Kemp, A., Burns, D., Dawson, M., Gu, E. & Hastie, J.
EPSRC (Engineering and Physical Sciences Research Council)
1/10/08 → 31/03/12
Project: Research
ADVANCED SOLID STATE LASER SOURCES AND SYSTEMS
Ferguson, A., Burns, D., Calvez, S., Dawson, M., Girkin, J., Hastie, J. & Kemp, A.
EPSRC (Engineering and Physical Sciences Research Council)
1/10/06 → 30/09/11
Project: Research

1 Participation in conference

SPIE Photonics West 2012
Jennifer Hastie (Invited speaker)
24 Jan 2012
Activity: Participating in or organising an event types › Participation in conference

Cite this

@article{7d09339f01bc4328879bd5d57923a6d6,

title = "Continuous-wave Raman laser pumped within a semiconductor disk laser cavity",

abstract = "A KGd(WO4)(2) Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5: 6W of absorbed diode pump power, and output power up to 0.8W at 1143nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157nm.",

keywords = "all-solid-state, intractivity, crystal, heatspreader, generation, power, continuous-wave raman , laser pumped , semiconductor disk laser",

author = "Parrotta, {Daniele Carmine} and Walter Lubeigt and Alan Kemp and David Burns and Martin Dawson and Jennifer Hastie",

year = "2011",

month = apr,

day = "1",

doi = "10.1364/OL.36.001083",

language = "English",

volume = "36",

pages = "1083--1085",

journal = "Optics Letters",

issn = "0146-9592",

publisher = "Optical Society of America",

number = "7",

}

TY - JOUR

T1 - Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

AU - Parrotta, Daniele Carmine

AU - Lubeigt, Walter

AU - Kemp, Alan

AU - Burns, David

AU - Dawson, Martin

AU - Hastie, Jennifer

PY - 2011/4/1

Y1 - 2011/4/1

N2 - A KGd(WO4)(2) Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5: 6W of absorbed diode pump power, and output power up to 0.8W at 1143nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157nm.

AB - A KGd(WO4)(2) Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5: 6W of absorbed diode pump power, and output power up to 0.8W at 1143nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157nm.

KW - all-solid-state

KW - intractivity

KW - crystal

KW - heatspreader

KW - generation

KW - power

KW - continuous-wave raman

KW - laser pumped

KW - semiconductor disk laser

U2 - 10.1364/OL.36.001083

DO - 10.1364/OL.36.001083

M3 - Article

VL - 36

SP - 1083

EP - 1085

JO - Optics Letters

JF - Optics Letters

SN - 0146-9592

IS - 7

ER -

Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

Abstract

Keywords

Access to Document

Projects

Diamond Raman Lasers

ADVANCED SOLID STATE LASER SOURCES AND SYSTEMS

Activities

SPIE Photonics West 2012

Cite this