Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm

S.A. Smith; J.M. Hopkins; J.E. Hastie; D. Burns; S. Calvez; M.D. Dawson; T. Jouhti; J. Kontinnen; M. Pessa; Institution of Engineering and Technology

doi:10.1049/el:20045378

Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm

S.A. Smith, J.M. Hopkins, J.E. Hastie, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, J. Kontinnen, M. Pessa, Institution of Engineering and Technology

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 μm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.

Original language	English
Pages (from-to)	935-937
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	15
DOIs	https://doi.org/10.1049/el:20045378
Publication status	Published - 22 Jul 2004

Keywords

diamond
elemental semiconductors
gallium arsenide
gallium compounds
indium compounds
laser mirrors
microchip lasers
surface emitting lasers
wide band gap semiconductors

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10.1049/el:20045378

Cite this

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title = "Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm",

abstract = "What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 μm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.",

keywords = "diamond, elemental semiconductors, gallium arsenide, gallium compounds, indium compounds, laser mirrors, microchip lasers, surface emitting lasers, wide band gap semiconductors",

author = "S.A. Smith and J.M. Hopkins and J.E. Hastie and D. Burns and S. Calvez and M.D. Dawson and T. Jouhti and J. Kontinnen and M. Pessa and {Institution of Engineering and Technology}",

year = "2004",

month = jul,

day = "22",

doi = "10.1049/el:20045378",

language = "English",

volume = "40",

pages = "935--937",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "15",

}

Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm. / Smith, S.A.; Hopkins, J.M.; Hastie, J.E.; Burns, D.; Calvez, S.; Dawson, M.D.; Jouhti, T.; Kontinnen, J.; Pessa, M.; Institution of Engineering and Technology.

In: Electronics Letters, Vol. 40, No. 15, 22.07.2004, p. 935-937.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm

AU - Smith, S.A.

AU - Hopkins, J.M.

AU - Hastie, J.E.

AU - Burns, D.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Jouhti, T.

AU - Kontinnen, J.

AU - Pessa, M.

AU - Institution of Engineering and Technology

PY - 2004/7/22

Y1 - 2004/7/22

N2 - What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 μm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.

AB - What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 μm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.

KW - diamond

KW - elemental semiconductors

KW - gallium arsenide

KW - gallium compounds

KW - indium compounds

KW - laser mirrors

KW - microchip lasers

KW - surface emitting lasers

KW - wide band gap semiconductors

UR - http://dx.doi.org/10.1049/el:20045378

U2 - 10.1049/el:20045378

DO - 10.1049/el:20045378

M3 - Article

VL - 40

SP - 935

EP - 937

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 15

ER -

Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm

Abstract

Keywords

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