Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315nm

S.A. Smith, J.M. Hopkins, J.E. Hastie, D. Burns, S. Calvez, M.D. Dawson, T. Jouhti, J. Kontinnen, M. Pessa, Institution of Engineering and Technology

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What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 μm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.
Original languageEnglish
Pages (from-to)935-937
Number of pages2
JournalElectronics Letters
Issue number15
Publication statusPublished - 22 Jul 2004


  • diamond
  • elemental semiconductors
  • gallium arsenide
  • gallium compounds
  • indium compounds
  • laser mirrors
  • microchip lasers
  • surface emitting lasers
  • wide band gap semiconductors

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