Efficient base driver circuit for silicon carbide bipolar junction transistors

N. McNeill, B.H. Stark, S.J. Finney, D. Holliday, H. Dymond

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The silicon carbide bipolar junction transistor needs large transient currents supplied into and out of its base terminal for rapid switching. To realise this, it is normally desirable to have a base driver circuit supply rail at a high voltage. However, the device also needs a steady base current to hold it in the on-state. Supplying this current from a highvoltage source is inefficient. A circuit is presented that applies high transient base-emitter voltages, but with low driver circuit power consumption.
Original languageEnglish
Pages (from-to)1450-1452
Number of pages3
JournalElectronics Letters
Issue number25
Publication statusPublished - 13 Dec 2018


  • high transient base-emitter voltages
  • low driver circuit power
  • silicon carbide bipolar junction transistor

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