Growth and optical and structural characterization of GaN on free-standing GaN substrates with an (Al,In)N insertion layer

K. Bejtka, R.W. Martin, I.M. Watson, S. Ndiaye, M. Leroux

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The effects of lattice-matched (Al,In)N insertion layers on the optical and structural properties of GaN films grown epitaxially on freestanding GaN substrates are described. The intensities and energetic positions of the GaN excitonic transitions in the photoluminescence from material grown above (Al,In)N show that high material quality and low strain have been preserved. The free exciton energies of the overgrown GaN, measured by reflectivity and photoluminescence, are 3.477, 3.482, and 3.500 eV for A, B, and C excitons, respectively, corresponding to strain-free GaN. The spectra are compared with those of a similar heterostructure grown on sapphire and of GaN-on-sapphire templates.
Original languageEnglish
Pages (from-to)191912-1
Number of pages191911
JournalApplied Physics Letters
Issue number191912
Publication statusPublished - 9 Nov 2006


  • growth characterisation
  • optical characterisation
  • structural characterization
  • GaN
  • GaN substrates
  • photonics
  • nanoscience

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