Induced magnetic moment of Eu3+ ions in GaN

Vyacheslav V. Kachkanov, M. J. M.J. Wallace, Gerrit G. Van Der Laan, Sarnjeet S. S.S. Dhesi, Stuart A. S.A. Cavill, Yasufumi Y. Fujiwara, Kevin Peter K.P. O'Donnell

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Magnetic semiconductors with coupled magnetic and electronic properties are of high technological and fundamental importance. Rare-earth elements can be used to introduce magnetic moments associated with the uncompensated spin of 4f-electrons into the semiconductor hosts. The luminescence produced by rare-earth doped semiconductors also attracts considerable interest due to the possibility of electrical excitation of characteristic sharp emission lines from intra 4f-shell transitions. Recently, electroluminescence of Eu-doped GaN in current-injection mode was demonstrated in p-n junction diode structures grown by organometallic vapour phase epitaxy. Unlike most other trivalent rare-earth ions, Eu3+ ions possess no magnetic moment in the ground state. Here we report the detection of an induced magnetic moment of Eu3+ ions in GaN which is associated with the 7F2 final state of 5D0→7F2 optical transitions emitting at 622 nm. The prospect of controlling magnetic moments electrically or optically will lead to the development of novel magneto-optic devices.
Original languageEnglish
Article number969
Number of pages5
JournalScientific Reports
Issue numberDecember
Publication statusPublished - 12 Dec 2012


  • materials science
  • optical materials
  • applied physics

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