InGaN microring light-emitting diodes

H.W. Choi, C.W. Jeon, M.D. Dawson

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


The fabrication and performance of an InGaN light-emitting diode (LED) array based on a microring device geometry is reported. This design has been adopted in order to increase the surface area for light extraction and to minimize losses due to internal reflections and reabsorption. Electrical characteristics of these devices are similar to those of a conventional large-area LED, while the directed light extraction proves to be superior. In fact, these devices are found to be more efficient when operated at higher currents. This may be attributed to improved heat sinking due to the large surface area to volume ratio. The potential applications of these devices are also discussed.
Original languageEnglish
Pages (from-to)33-35
Number of pages2
JournalIEEE Photonics Technology Letters
Issue number1
Publication statusPublished - Jan 2004


  • InGaN microring light-emitting diodes
  • LED array
  • directed light extraction
  • internal reflections
  • large-area LED
  • light extraction
  • microring device

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