Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen

Marco A. Sousa, Teresa C. Esteves, Nabiha Ben Sedrine, Joana Rodrigues, Márcio B. Lourenço, Andrés Redondo-Cubero, Eduardo Alves, Kevin P. O'Donnell, Michal Bockowski, Christian Wetzel, Maria R. Correia, Katharina Lorenz, Teresa Monteiro

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We studied the optical properties of metalorganic chemical vapour deposited (MOCVD) InGaN/GaN multiple quantum wells (MQW) subjected to nitrogen (N) implantation and post-growth annealing treatments. The optical characterization was carried out by means of temperature and excitation density-dependent steady state photoluminescence (PL) spectroscopy, supplemented by room temperature PL excitation (PLE) and PL lifetime (PLL) measurements. The as-grown and as-implanted samples were found to exhibit a single green emission band attributed to localized excitons in the QW, although the N implantation leads to a strong reduction of the PL intensity. The green band was found to be surprisingly stable on annealing up to 1400°C. A broad blue band dominates the low temperature PL after thermal annealing in both samples. This band is more intense for the implanted sample, suggesting that defects generated by N implantation, likely related to the diffusion/segregation of indium (In), have been optically activated by the thermal treatment.

Original languageEnglish
Article number9703
Number of pages6
JournalScientific Reports
Publication statusPublished - 13 Apr 2015


  • multi quantum wells
  • luminescence
  • light emitting diodes

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