The luminescent properties of GaN thin films grown by pulsed laser deposition have been studied to understand the nature of the luminescent centres and the recombination dynamics. The films were grown on heated sapphire substrates using KrF excimer laser ablation of GaN in a reactive atmosphere of nitrogen. At low temperature the continuous wave (CW) blue luminescence of the samples grown shows two sharp lines attributed to excitonic recombination localized at extended defects. An analysis of the temperature dependence of photoluminescence (PL) lifetimes assess the relative contributions of radiative and non-radiative recombination in the centres responsible for these emissions. The measurement of room temperature nanosecond radiative lifetimes for these lines supports the excitonic attribution of the luminescence.
|Number of pages||4|
|Journal||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|Publication status||Published - 6 May 1999|
|Event||Proceedings of the 1998 Symposium L: on Nitrides and Related Wide Band Gap Materials (E-MRS Meeting) - Strasbourg|
Duration: 16 Jun 1998 → 19 Jun 1998