Microstripe-array InGaN light-emitting diodes with individually addressable elements

H.X. Zhang, E. Gu, C.W. Jeon, Z. Gong, M.D. Dawson, M.A.A. Neil, P.M.W. French

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High-performance InGaN light-emitting diodes consisting of 120 side-by-side and individually addressable microstripe elements have been successfully fabricated. Each stripe in these devices is 24 pm in width and 3600 mu m long, with a center-to-center spacing between adjacent stripes of 34 mu m. The emission wavelengths demonstrated range from ultraviolet (UV) (370 nm) to blue (470 nm) and green (520 nm). The devices show good uniformity and performance due to finger-pattern n-electrodes running between adjacent stripes. In the case of the UV devices for example, turn-on voltages are around 3.5 V and continuous-wave output powers per stripe similar to 80 mu W at 20 mA. A major feature of these devices is their ability to generate pattern-programmable emission, which offers applications in areas including structured illumination wide-field sectioning optical microscopy.
Original languageEnglish
Pages (from-to)1681-1683
Number of pages2
JournalIEEE Photonics Technology Letters
Issue number15
Publication statusPublished - Aug 2006


  • inGaN
  • light-emitting diode (LED)
  • micropixellated light-emitting diode (LED)

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