Modelling and experimental analysis of InGaN mOVPE in the aixtron aIX 200/4 rF-S horizontal reactor

E.V. Yakovlev, R.A. Talalaev, R.W. Martin, N. Peng, C. Jeynes, C.J. Deatcher, I.M. Watson

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A combined modeling and experimental analysis of InGaN deposition in the widely used single-wafer Aixtron AIX 200/4 RF-S reactor is presented. The main focus of the study is the effect of the deposition temperature on the layer composition. InGaN epilayers were grown at setpoint temperatures between 760 and 920 °C, keeping other process parameters constant. Epilayer compositions were analysed using strainindependent methods. Results from the modeling generally match the experimental compositional data well, and thus are used to analyze factors affecting indium transport and incorporation efficiency.
Original languageEnglish
Pages (from-to)1620-1623
Number of pages4
JournalPhysica Status Solidi C
Issue number6
Early online date10 May 2006
Publication statusPublished - 1 Jun 2006


  • inGaN

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