Optical properties of high quality Cu2ZnSnSe4 thin films

F. Luckert; D. I. Hamilton; M. V. Yakushev; N. S. Beattie; G. Zoppi; M. Moynihan; I. Forbes; A. V. Karotki; A. V. Mudryi; M. Grossberg; J. Krustok; R. W. Martin

doi:10.1063/1.3624827

Optical properties of high quality Cu2ZnSnSe4 thin films

F. Luckert, D. I. Hamilton, M. V. Yakushev, N. S. Beattie, G. Zoppi, M. Moynihan, I. Forbes, A. V. Karotki, A. V. Mudryi, M. Grossberg, J. Krustok, R. W. Martin

Research output: Contribution to journal › Article › peer-review

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Abstract

Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra.

Original language	English
Article number	062104
Pages (from-to)	-
Number of pages	3
Journal	Applied Physics Letters
Volume	99
Issue number	6
DOIs	https://doi.org/10.1063/1.3624827
Publication status	Published - 8 Aug 2011

Keywords

photoluminescence
selenisation
dependence
energy
copper compounds
excitons
phonons
photoionisation
Raman spectra
semiconductor thin films
sputter deposition
tin compounds
zinc compounds
TIC - Bionanotechnology

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10.1063/1.3624827

OpticalpropertiesFinal published version, 1.36 MB

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title = "Optical properties of high quality Cu2ZnSnSe4 thin films",

abstract = "Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra.",

keywords = "photoluminescence, selenisation, dependence, energy, copper compounds, excitons, phonons, photoionisation, Raman spectra, semiconductor thin films, sputter deposition, tin compounds, zinc compounds, TIC - Bionanotechnology",

author = "F. Luckert and Hamilton, {D. I.} and Yakushev, {M. V.} and Beattie, {N. S.} and G. Zoppi and M. Moynihan and I. Forbes and Karotki, {A. V.} and Mudryi, {A. V.} and M. Grossberg and J. Krustok and Martin, {R. W.}",

year = "2011",

month = aug,

day = "8",

doi = "10.1063/1.3624827",

language = "English",

volume = "99",

pages = "--",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "6",

}

Optical properties of high quality Cu2ZnSnSe4 thin films. / Luckert, F.; Hamilton, D. I.; Yakushev, M. V.; Beattie, N. S.; Zoppi, G.; Moynihan, M.; Forbes, I.; Karotki, A. V.; Mudryi, A. V.; Grossberg, M.; Krustok, J.; Martin, R. W.

In: Applied Physics Letters, Vol. 99, No. 6, 062104, 08.08.2011, p. -.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Optical properties of high quality Cu2ZnSnSe4 thin films

AU - Luckert, F.

AU - Hamilton, D. I.

AU - Yakushev, M. V.

AU - Beattie, N. S.

AU - Zoppi, G.

AU - Moynihan, M.

AU - Forbes, I.

AU - Karotki, A. V.

AU - Mudryi, A. V.

AU - Grossberg, M.

AU - Krustok, J.

AU - Martin, R. W.

PY - 2011/8/8

Y1 - 2011/8/8

N2 - Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra.

AB - Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra.

KW - photoluminescence

KW - selenisation

KW - dependence

KW - energy

KW - copper compounds

KW - excitons

KW - phonons

KW - photoionisation

KW - Raman spectra

KW - semiconductor thin films

KW - sputter deposition

KW - tin compounds

KW - zinc compounds

KW - TIC - Bionanotechnology

UR - http://www.scopus.com/inward/record.url?scp=84860390526&partnerID=8YFLogxK

U2 - 10.1063/1.3624827

DO - 10.1063/1.3624827

M3 - Article

VL - 99

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

M1 - 062104

ER -

Optical properties of high quality Cu2ZnSnSe4 thin films

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Magnetic Field - and Pressure - Optical Effects In CULNSE2 And CULNS2

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Optical properties of high quality Cu2ZnSnSe4 thin films

Abstract

Keywords

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Magnetic Field - and Pressure - Optical Effects In CULNSE2 And CULNS2

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