Progress in atomic layer deposited α-Ga2O3 materials and solar-blind detectors

F. C.-P. Massabuau, J. W. Roberts, D. Nicol, P. R. Edwards, M. McLelland, G. L. Dallas, D. A. Hunter, E. A. Nicolson, J. C. Jarman, A. Kovács, R. W. Martin, R. A. Oliver, P. R. Chalker

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Atomic layer deposition (ALD) offers a low thermal budget method for producing α-Ga2O3 films on sapphire substrate. In this paper we review the recent progress on plasma-enhanced ALD growth of α-Ga2O3 and present the optical and photoconductive properties of the deposited films. We show that the deposited material exhibits an epitaxial relationship with the sapphire substrate, and with an atomically sharp film-substrate interface. The α-Ga2O3 films had an optical bandgap energy measured at 5.11 eV, and exhibited a broad luminescence spectrum dominated by ultraviolet, blue and green bands, in line with current literature. We finally demonstrate the suitability of the material for solar-blind photodetection.
Original languageEnglish
Title of host publicationProceedings Volume 11687, Oxide-based Materials and Devices
EditorsDavid J. Rogers, David C. Look, Ferechteh H. Teherani
Place of PublicationBellingham, WA, United States
ISBN (Electronic)9781510642096
Publication statusPublished - 5 Mar 2021
EventSociety of Photo-optical Instrumentation Engineers Oxide-based Materials and Devices XII - Online
Duration: 6 Mar 202112 Mar 2021
Conference number: 12

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceSociety of Photo-optical Instrumentation Engineers Oxide-based Materials and Devices XII
Abbreviated titleSPIE OPTO 2021
Internet address


  • gallium oxide
  • corundum phase
  • atomic layer deposition
  • solar-blind detection

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