Quantum well intermixing in GaInNAs/GaAs structures

H.D. Sun, R. Macaluso, S. Calvez, M.D. Dawson, F. Robert, A.C. Bryce, J.H. Marsh, P. Gilet, L. Grenouillet, A. Million, K.B. Nam, J.Y. Lin, H.X. Jiang

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We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N. (C) 2004 American Institute of Physics.
Original languageEnglish
Pages (from-to)7581-7585
Number of pages4
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - Dec 2003


  • gallium compounds
  • gallium arsenide
  • III-V semiconductors
  • semiconductor quantum wells
  • rapid thermal annealing
  • photoluminescence
  • spectral line shift
  • sputtering
  • chemical interdiffusion

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