Quantum well intermixing in GaInNAs/GaAs structures

H.D. Sun; R. Macaluso; S. Calvez; M.D. Dawson; F. Robert; A.C. Bryce; J.H. Marsh; P. Gilet; L. Grenouillet; A. Million; K.B. Nam; J.Y. Lin; H.X. Jiang

doi:10.1063/1.1627950

Quantum well intermixing in GaInNAs/GaAs structures

H.D. Sun, R. Macaluso, S. Calvez, M.D. Dawson, F. Robert, A.C. Bryce, J.H. Marsh, P. Gilet, L. Grenouillet, A. Million, K.B. Nam, J.Y. Lin, H.X. Jiang

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N. (C) 2004 American Institute of Physics.

Original language	English
Pages (from-to)	7581-7585
Number of pages	4
Journal	Journal of Applied Physics
Volume	94
Issue number	12
DOIs	https://doi.org/10.1063/1.1627950
Publication status	Published - Dec 2003

Keywords

gallium compounds
gallium arsenide
III-V semiconductors
semiconductor quantum wells
rapid thermal annealing
photoluminescence
spectral line shift
sputtering
chemical interdiffusion

Access to Document

10.1063/1.1627950

Cite this

@article{8e4f0c40fd874a938a620b0231b2b6ba,

title = "Quantum well intermixing in GaInNAs/GaAs structures",

abstract = "We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N. (C) 2004 American Institute of Physics.",

keywords = "gallium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum wells, rapid thermal annealing, photoluminescence, spectral line shift, sputtering, chemical interdiffusion",

author = "H.D. Sun and R. Macaluso and S. Calvez and M.D. Dawson and F. Robert and A.C. Bryce and J.H. Marsh and P. Gilet and L. Grenouillet and A. Million and K.B. Nam and J.Y. Lin and H.X. Jiang",

year = "2003",

month = dec,

doi = "10.1063/1.1627950",

language = "English",

volume = "94",

pages = "7581--7585",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "12",

}

TY - JOUR

T1 - Quantum well intermixing in GaInNAs/GaAs structures

AU - Sun, H.D.

AU - Macaluso, R.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Robert, F.

AU - Bryce, A.C.

AU - Marsh, J.H.

AU - Gilet, P.

AU - Grenouillet, L.

AU - Million, A.

AU - Nam, K.B.

AU - Lin, J.Y.

AU - Jiang, H.X.

PY - 2003/12

Y1 - 2003/12

N2 - We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N. (C) 2004 American Institute of Physics.

AB - We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N. (C) 2004 American Institute of Physics.

KW - gallium compounds

KW - gallium arsenide

KW - III-V semiconductors

KW - semiconductor quantum wells

KW - rapid thermal annealing

KW - photoluminescence

KW - spectral line shift

KW - sputtering

KW - chemical interdiffusion

UR - http://link.aip.org/link/?JAPIAU/94/7581/1

UR - http://dx.doi.org/10.1063/1.1627950

U2 - 10.1063/1.1627950

DO - 10.1063/1.1627950

M3 - Article

VL - 94

SP - 7581

EP - 7585

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

ER -

Quantum well intermixing in GaInNAs/GaAs structures

Abstract

Keywords

Access to Document

Other files and links

Cite this