Selective phase growth and precise-layer control in MoTe2

James P. Fraser, Liudvika Masaityte, Jingyi Zhang, Stacey Laing, Juan Carlos Moreno-López, Adam F. McKenzie, Jessica C. McGlynn, Vishal Panchal, Duncan Graham, Olga Kazakova, Thomas Pichler, Donald A. MacLaren, David A. J. Moran, Alexey Y. Ganin

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Minor structural changes in transition metal dichalcogenides can have dramatic effects on their electronic properties. This makes the quest for key parameters that enable a selective choice between the competing metallic and semiconducting phases in the 2D MoTe2 system compelling. Herein, we report the optimal conditions at which the choice of the initial seed layer dictates the type of crystal structure of atomically-thin MoTe2 films grown by chemical vapour deposition (CVD). When Mo metal is used as a seed layer, semiconducting 2H-MoTe2 is the only product. Conversely, MoO3 leads to the preferential growth of metallic 1T-MoTe2. The control over phase growth allows for simultaneous deposition of both 2H-MoTe2 and 1T '-MoTe2 phases on a single substrate during one CVD reaction. Furthermore, Rhodamine 6G dye can be detected using few-layered 1T '-MoTe2 films down to 5 nM concentration, demonstrating surface enhanced Raman spectroscopy (SERS) with sensitivity several orders of magnitude higher than for bulk 1T '-MoTe2.
Original languageEnglish
Article number48
Number of pages9
JournalCommunications Materials
Early online date24 Jul 2020
Publication statusE-pub ahead of print - 24 Jul 2020


  • raman enhancement
  • transition
  • molybdenum
  • scattering
  • films
  • XPS

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