Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers

K. P. O'Donnell; R. W. Martin; P. G. Middleton; S. C. Bayliss; I. Fletcher; W. Van Der Stricht; P. Demeester; I. Moerman

doi:10.1016/S0921-5107(98)00343-2

Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers

K. P. O'Donnell, R. W. Martin, P. G. Middleton, S. C. Bayliss, I. Fletcher, W. Van Der Stricht, P. Demeester, I. Moerman

Physics

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

A comparison of the electroluminescence (EL) spectra and photocurrent (PC) spectra of commercial Nichia 'chip-type' diodes was undertaken in order to clarify the energy relationship between localised and delocalised states. In addition, InGaN epilayers were studied using comparative scanning electron microscopy (SEM), cathodoluminescence (CL) and energy dispersive X-ray (EDX) imaging and optical absorption. The existence of localised states is demonstrated by the so-called 'Stokes' shift' between emission and absorption peaks. After clarifying the definition of this quantity we are able to established that it scales linearly with the emission energy. An explanation of the optical results is found in a detailed picture of the microscopic nature of the InGaN alloys, with regions of relatively high In content found within the matrix, on a size scale much larger than that of a quantum dot.

Original language	English
Pages (from-to)	288-291
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	59
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(98)00343-2
Publication status	Published - 6 May 1999
Event	Proceedings of the 1998 Symposium L: on Nitrides and Related Wide Band Gap Materials (E-MRS Meeting) - Strasbourg Duration: 16 Jun 1998 → 19 Jun 1998

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10.1016/S0921-5107(98)00343-2

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O'Donnell, K. P., Martin, R. W., Middleton, P. G., Bayliss, S. C., Fletcher, I., Van Der Stricht, W., Demeester, P., & Moerman, I. (1999). Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 59(1-3), 288-291. https://doi.org/10.1016/S0921-5107(98)00343-2

O'Donnell, K. P. ; Martin, R. W. ; Middleton, P. G. ; Bayliss, S. C. ; Fletcher, I. ; Van Der Stricht, W. ; Demeester, P. ; Moerman, I. / Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 1999 ; Vol. 59, No. 1-3. pp. 288-291.

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title = "Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers",

abstract = "A comparison of the electroluminescence (EL) spectra and photocurrent (PC) spectra of commercial Nichia 'chip-type' diodes was undertaken in order to clarify the energy relationship between localised and delocalised states. In addition, InGaN epilayers were studied using comparative scanning electron microscopy (SEM), cathodoluminescence (CL) and energy dispersive X-ray (EDX) imaging and optical absorption. The existence of localised states is demonstrated by the so-called 'Stokes' shift' between emission and absorption peaks. After clarifying the definition of this quantity we are able to established that it scales linearly with the emission energy. An explanation of the optical results is found in a detailed picture of the microscopic nature of the InGaN alloys, with regions of relatively high In content found within the matrix, on a size scale much larger than that of a quantum dot.",

author = "O'Donnell, {K. P.} and Martin, {R. W.} and Middleton, {P. G.} and Bayliss, {S. C.} and I. Fletcher and {Van Der Stricht}, W. and P. Demeester and I. Moerman",

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O'Donnell, KP, Martin, RW, Middleton, PG, Bayliss, SC, Fletcher, I, Van Der Stricht, W, Demeester, P & Moerman, I 1999, 'Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 59, no. 1-3, pp. 288-291. https://doi.org/10.1016/S0921-5107(98)00343-2

Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers. / O'Donnell, K. P.; Martin, R. W.; Middleton, P. G.; Bayliss, S. C.; Fletcher, I.; Van Der Stricht, W.; Demeester, P.; Moerman, I.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 59, No. 1-3, 06.05.1999, p. 288-291.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers

AU - O'Donnell, K. P.

AU - Martin, R. W.

AU - Middleton, P. G.

AU - Bayliss, S. C.

AU - Fletcher, I.

AU - Van Der Stricht, W.

AU - Demeester, P.

AU - Moerman, I.

PY - 1999/5/6

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N2 - A comparison of the electroluminescence (EL) spectra and photocurrent (PC) spectra of commercial Nichia 'chip-type' diodes was undertaken in order to clarify the energy relationship between localised and delocalised states. In addition, InGaN epilayers were studied using comparative scanning electron microscopy (SEM), cathodoluminescence (CL) and energy dispersive X-ray (EDX) imaging and optical absorption. The existence of localised states is demonstrated by the so-called 'Stokes' shift' between emission and absorption peaks. After clarifying the definition of this quantity we are able to established that it scales linearly with the emission energy. An explanation of the optical results is found in a detailed picture of the microscopic nature of the InGaN alloys, with regions of relatively high In content found within the matrix, on a size scale much larger than that of a quantum dot.

AB - A comparison of the electroluminescence (EL) spectra and photocurrent (PC) spectra of commercial Nichia 'chip-type' diodes was undertaken in order to clarify the energy relationship between localised and delocalised states. In addition, InGaN epilayers were studied using comparative scanning electron microscopy (SEM), cathodoluminescence (CL) and energy dispersive X-ray (EDX) imaging and optical absorption. The existence of localised states is demonstrated by the so-called 'Stokes' shift' between emission and absorption peaks. After clarifying the definition of this quantity we are able to established that it scales linearly with the emission energy. An explanation of the optical results is found in a detailed picture of the microscopic nature of the InGaN alloys, with regions of relatively high In content found within the matrix, on a size scale much larger than that of a quantum dot.

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EP - 291

JO - Materials Science and Engineering B

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SN - 0921-5107

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T2 - Proceedings of the 1998 Symposium L: on Nitrides and Related Wide Band Gap Materials (E-MRS Meeting)

Y2 - 16 June 1998 through 19 June 1998

ER -

Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers

Abstract

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