Stimulated emission and lasing in Cu(In,Ga)Se2 thin films

I E Svitsiankou, V N Pavlovskii, EV Lutsenko, G P Yablonskii, A V Mudryi, VD Zhivulko, M V Yakushev, R W Martin

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Stimulated emission and lasing in Cu(In,Ga)Se 2 thin films have been demonstrated at a temperature of 20 K using excitation by a nanosecond pulsed N 2 laser with power densities in the range from 2 to 100 kW cm − 2 . Sharp narrowing of the photoluminescence band, superlinear dependence of its intensity on excitation laser power, as well as stabilization of the spectral position and of the full-width at half-maximum of the band were observed in the films at increasing excitation intensity. The stimulated emission threshold was determined to be 20 kW cm − 2 . A gain value of 94 cm − 1 has been estimated using the variable stripe length method. Several sharp laser modes near 1.13 eV were observed above the laser threshold of I thr ~ 50 kW cm − 2
Original languageEnglish
Article number095106
Number of pages5
JournalJournal of Physics D: Applied Physics
Issue number9
Publication statusPublished - 1 Feb 2016


  • stimulated emission
  • lasing
  • gain
  • threshold
  • photoluminescence

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