Structural and optical properties of Ga auto-incorporated InAlN epilayers

E. Taylor, M.D. Smith, T.C. Sadler, K. Lorenz, H.N. Li, E. Alves, P.J. Parbrook, R.W. Martin

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InAlN epilayers deposited on thick GaN buffer layers grown by metalorganic chemical vapour deposition (MOCVD) revealed an auto-incorporation of Ga when analysed by wavelength dispersive x-ray (WDX) spectroscopy and Rutherford backscattering spectrometry (RBS). Samples were grown under similar conditions with the change in reactor flow rate resulting in varying Ga contents of 12-24%. The increase in flow rate from 8000 to 24 000 sccm suppressed the Ga auto-incorporation which suggests that the likely cause is from residual Ga left behind from previous growth runs. The luminescence properties of the resultant InAlGaN layers were investigated using cathodoluminescence (CL) measurements.

Original languageEnglish
Pages (from-to)97-101
Number of pages5
JournalJournal of Crystal Growth
Early online date28 Sep 2014
Publication statusPublished - 15 Dec 2014


  • metalorganic chemical vapour deposition
  • wavelength dispersive x-ray
  • Rutherford backscattering spectrometry
  • InAlN
  • InAlGaN
  • Ga incorporation

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