Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

S. V. Novikov; M. Ting; K.M. Yu; W.L. Sarney; R.W. Martin; S.P. Svensson; W. Walukiewicz; C.T. Foxon

doi:10.1016/j.jcrysgro.2014.06.042

Tellurium n-type doping of highly mismatched amorphous GaN_1-xAs_x alloys in plasma-assisted molecular beam epitaxy

S. V. Novikov, M. Ting, K.M. Yu, W.L. Sarney, R.W. Martin, S.P. Svensson, W. Walukiewicz, C.T. Foxon

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Abstract

In this paper we report our study on n-type Te doping of amorphous GaNi1-xAsx layers grown by plasma assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaNi1-xAsx layers has been successfully achieved with a maximum Te concentration of 9 x 10(20) cm(-3). Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3 x 10(19) cm(-3) and mobilities of similar to 1 cm(2)/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaNi1-xAsx layers has been determined.

Original language	English
Pages (from-to)	9-13
Number of pages	5
Journal	Journal of Crystal Growth
Volume	404
Early online date	30 Jun 2014
DOIs	https://doi.org/10.1016/j.jcrysgro.2014.06.042
Publication status	Published - 15 Oct 2014

Keywords

GaNAs
GaN
tellurium

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10.1016/j.jcrysgro.2014.06.042

Novikov-etal-JCG2014-doping-of-highly-mismatched-amorphous-GaNi1-xAsxAccepted author manuscript, 145 KBLicence: CC BY-NC-ND 4.0

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@article{7c62bc55391a4af5a1818f354eaeaf02,

title = "Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy",

abstract = "In this paper we report our study on n-type Te doping of amorphous GaNi1-xAsx layers grown by plasma assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaNi1-xAsx layers has been successfully achieved with a maximum Te concentration of 9 x 10(20) cm(-3). Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3 x 10(19) cm(-3) and mobilities of similar to 1 cm(2)/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaNi1-xAsx layers has been determined. ",

keywords = "GaNAs, GaN, tellurium",

author = "Novikov, {S. V.} and M. Ting and K.M. Yu and W.L. Sarney and R.W. Martin and S.P. Svensson and W. Walukiewicz and C.T. Foxon",

year = "2014",

month = oct,

day = "15",

doi = "10.1016/j.jcrysgro.2014.06.042",

language = "English",

volume = "404",

pages = "9--13",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

AU - Novikov, S. V.

AU - Ting, M.

AU - Yu, K.M.

AU - Sarney, W.L.

AU - Martin, R.W.

AU - Svensson, S.P.

AU - Walukiewicz, W.

AU - Foxon, C.T.

PY - 2014/10/15

Y1 - 2014/10/15

N2 - In this paper we report our study on n-type Te doping of amorphous GaNi1-xAsx layers grown by plasma assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaNi1-xAsx layers has been successfully achieved with a maximum Te concentration of 9 x 10(20) cm(-3). Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3 x 10(19) cm(-3) and mobilities of similar to 1 cm(2)/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaNi1-xAsx layers has been determined.

AB - In this paper we report our study on n-type Te doping of amorphous GaNi1-xAsx layers grown by plasma assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaNi1-xAsx layers has been successfully achieved with a maximum Te concentration of 9 x 10(20) cm(-3). Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3 x 10(19) cm(-3) and mobilities of similar to 1 cm(2)/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaNi1-xAsx layers has been determined.

KW - GaNAs

KW - GaN

KW - tellurium

UR - http://www.sciencedirect.com/science/journal/00220248

U2 - 10.1016/j.jcrysgro.2014.06.042

DO - 10.1016/j.jcrysgro.2014.06.042

M3 - Article

VL - 404

SP - 9

EP - 13

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -

Tellurium n-type doping of highly mismatched amorphous GaN_1-xAs_x alloys in plasma-assisted molecular beam epitaxy

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Amorphous and crystalline GaNAs alloys for solar energy conversion devices

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Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

Abstract

Keywords

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Amorphous and crystalline GaNAs alloys for solar energy conversion devices

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Tellurium n-type doping of highly mismatched amorphous GaN_1-xAs_x alloys in plasma-assisted molecular beam epitaxy