Abstract
In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of /spl sim/4/spl times/10/sup 14/ p/cm/sup 2/, no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T<120 K. Besides confirming the previously observed 'Lazarus effect' in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments.
Original language | English |
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Pages (from-to) | 228-231 |
Number of pages | 4 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 46 |
Issue number | 3 |
DOIs | |
Publication status | Published - 30 Jun 1999 |
Keywords
- silicon detectors
- cryogenic temperatures
- Lazarus effect